Metal-insulator-metal (MIM) capacitors are one of the most essential passive components in radio frequency (RF) and analog/mixed signal (AMS) integrated circuits (ICs). These capacitors occupy a large amount of chip area compared to other components in the ICs. This strongly affects the ability to reduce the size of the chips, but the reduction and downscaling of the chips are crucial in order to reduce the cost, and therefore increase the functionality and performance of the devices. In that regard, nano-structured high-k dielectrics are used in MIM capacitors, which are developed for RF and AMS circuits. The technology roadmap for semiconductors specifies high capacitance density (>5fF/µm2), low leakage current density (<10-8A/cm2) and good capacitance density-voltage linearity (<100ppm/V2) for MIM capacitors.