Especially for mobile applications, the reduction of the power dissipation of integrated circuits is a key challenge. The Tunnel Field-Effect Transistor (TFET) allows for a strong reduction of the power dissipation in comparison to conventional Field-Effect Transistors (FETs). Emerging Research Materials (ERMs), such as monolayer graphene or tungsten diselenide, are promising candidates for the realization of TFETs; however, appropriate source-drain doping is exremely challenging. This book describes the developement of Buried Triple-Gate (BTG) structures, which enable electrostatic doping of ERMs. FETs from ERMs are manufactores on the BTG structures and set up to function in nFET, pFET, and TFET configurations. These FET devices are characterized, and band-to-band tunneling phenomena are investigated