Atomic layer deposition of aluminum oxide on crystalline silicon
Fundamental interface properties and application to solar cells, Berichte aus de
Shaker
ISBN 9783844030396202 Seiten, Taschenbuch/Paperback
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In the present dissertation, Florian Werner investigates the application of atomic layer deposition (ALD) of amorphous aluminum oxide (Al2O3) dielectric layers to silicon solar cells. Highlights of his thesis include:
A novel spatial ALD process, which is compatible with industry demands.
A comprehensive model of the cSi/Al2O3 interface, which describes the chemical composition of the deposited film and electronhole recombination at the interface.
An improved parameterization of intrinsic lifetimes in silicon, which accounts for Coulombenhanced Auger and radiative recombination.
An Al2O3induced hole inversion layer (IL) as holecollecting emitter in IL solar cells made on ntype silicon, allowing efficiencies above 26%.
A novel spatial ALD process, which is compatible with industry demands.
A comprehensive model of the cSi/Al2O3 interface, which describes the chemical composition of the deposited film and electronhole recombination at the interface.
An improved parameterization of intrinsic lifetimes in silicon, which accounts for Coulombenhanced Auger and radiative recombination.
An Al2O3induced hole inversion layer (IL) as holecollecting emitter in IL solar cells made on ntype silicon, allowing efficiencies above 26%.